FCH22N60N datasheet

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О ДАТАШИТЕ

• Маркировка
  FCH22N60N
• Производитель
  Fairchild Semiconductor
• Описание
  Fairchild Semiconductor FCH22N60N Configuration: Single Continuous Drain Current: 22 A Current - Continuous Drain (id) @ 25?° C: 22A Drain To Source Voltage (vdss): 600V Drain-source Breakdown Voltage: 600 V Fall Time: 4 ns Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 22 S Gate Charge (qg) @ Vgs: 45nC @ 10V Gate Charge Qg: 45 nC Input Capacitance (ciss) @ Vds: 1950pF @ 100V Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: * Power - Max: 205W Power Dissipation: 205 W Rds On (max) @ Id, Vgs: 165 mOhm @ 11A, 10V Resistance Drain-source Rds (on): 0.14 Ohms Rise Time: 16.7 ns Series: SupreMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 250?µA
• Количество страниц
  8 шт.
• Форматы файла
  HTML, PDF

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